3-Level NPC I-type inverter (3-phase application)


A multi-levels inverter for higher voltage. The figure shows a 3-level inverter in which the midpoint of the input voltage is clamped by diodes. Since the applied voltage of the switch is half of the input voltage and the ripple current of the inductor is also reduced, low loss and miniaturization can be expected. By increasing the number of levels, it is possible to handle even higher voltages.


- Multi-level, complex topology
- choise of SiC MOSFET reduce losses significantly



Key Products

Product CategoryProduct FamilyProduct NumberFeature
Switch750V SiC MOSFETSCT4xxxDx seriesThe latest SiC MOSFET device. Enhanced low on-resistance enable best in class performance. It supports 750 V withstand voltage, ensuring a higher operating margin than conventional products, and can be used safely.
650V SiC MOSSCT3xxxAx seriesTrench-gate SiC MOSFET with low on-resistance (50% reduction) compared to conventional products.
650V IGBTRGWxxTx65 seriesTrench-gate and thin-wafer technologies are utilized to achieve low VCE(sat) reducing switching loss.
Diode650V SiC SBDSCS3xxAx seriesHigh IFSM in spite of low VF, low leakage current provides safety design
650V Si FRDRFL seriesImproved fast switching capability than RFN series. 650V higher voltage torelance.
650V Si FRDRFUH seriesSmall trr enable fast switching capability, RFUH series compatible to automotive use case.
Gate DriverGalvanic Isolated gate driverBM61x4xRFV1ch configuration, 3,750Vrms isolated type Gate Driver, can be used for switching devices with current source pins.


B-012. 3-level NPC-I Inverter POUT=10kW

Related Topologies

Full bridge inverter (1-phase application)

HERIC inverter (1-phase application)

3-Level NPC TYPE-T inverter (3-phase application)

2-Level full bridge inverter (3-phase application)