Full bridge (H bridge) inverter (1-phase application)


A simple and commonly used H-bridge type inverter. It is also called a two-level inverter because the applied voltage of each switch takes two level as Vin and 0V.


- 4 MOSFETs conform full bridge, it is also called H-bridge
- Very popular topology
- Various choises of Boost Switch depend on system requirements
     - Lower cost SJ-MOSFET
     - Lower loss SiC MOSFET, IGBT
     - Smaller Package choises from 3-leads, 4-leads or 7-leads,



Key Products

Product CategoryProduct FamilyProduct NumberFeature
Full bridge650V IGBTRGWxxTx65 seriesTrench-gate and thin-wafer technologies are utilized to achieve low VCE(sat) reducing switching loss.
600V SJ MOSFETR60 serires600 to 800V power MOSFETs using superjunction technlogy, PrestoMOSTM series enable high speed switching and low on-resistance performance. Variaous choice of package are availble.
750V SiC MOSFETSCT4xxxDx seriesThe latest SiC MOSFET device. Enhanced low on-resistance enable best in class performance. It supports 750 V withstand voltage, ensuring a higher operating margin than conventional products, and can be used safely.
650V SiC MOSFETSCT3xxxAx seriesTrench-gate SiC MOSFET with low on-resistance (50% reduction) compared to conventional products.
Gate DriverGalvanic Isolated gate driverBM61x4xRFV1ch configuration, 3,750Vrms isolated type Gate Driver, can be used for switching devices with current source pins.


Comming soon

Related Topologies

Full bridge inverter (1-phase application)

3-Level NPC TYPE-I inverter (3-phase application)

3-Level NPC TYPE-T inverter (3-phase application)

2-Level full bridge inverter (3-phase application)