SCT3105KR
1200V Nch 4단자 패키지 SiC-MOSFET
SCT3105KR
SCT3105KR
1200V Nch 4단자 패키지 SiC-MOSFET
SCT3105KR은 고효율이 요구되는 서버용 전원 및 태양광 인버터, 전동차의 충전 스테이션 등에 최적인 트렌치 게이트 구조의 SiC MOSFET입니다. 파워 소스 단자와 드라이버 소스 단자를 분리한 4단자 패키지로, 고속 스위칭 성능을 최대화하였습니다. 특히 turn-on 시 손실을 대폭 개선하였습니다. 기존의 3단자 패키지 (TO-247N) 대비, turn-on 손실과 turn-off 손실을 통틀어 약 35％의 손실 저감을 기대할 수 있습니다.
Product Detail
사양 :
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
105
Generation
3rd Gen (Trench)
Drain Current[A]
24
Total Power Dissipation[W]
134
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x23.45 (t=5.2)
특징 :
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
Reference Design / Application Evaluation Kit
-
- Evaluation Board - P02SCT3040KR-EVK-001
- For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
Enables evaluation of other ROHM SiC MOSFETs by simply changing the circuit multiplier - In addition to the TO-247-4L package, there are through-holes for TO-247-3L that make it possible to perform comparative evaluations on the same board
- Single power supply (+12V operation)
- Supports double pulse testing up to 150A and switching up to 500kHz
- Compatible with a variety of power supply topologies (Buck/Boost/Half Bridge)
- Built-in isolated power supply for gate drive adjustable via variable resistor (+12V to +23V)
- Jumper pins enable switching between negative bias/zero bias for gate drive
- Includes overcurrent protection (DESAT, OCP) along with a function for preventing simultaneous ON of both upper and lower arms
- For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
