SCT2080KEHR
Nch SiC 파워 MOSFET
SCT2080KEHR
SCT2080KEHR
Nch SiC 파워 MOSFET
SiC Planar 타입 MOSFET입니다. 고내압 · 저 ON 저항 · 고속 스위칭이 특징입니다.
Product Detail
사양 :
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
2nd Gen (Planar)
Drain Current[A]
40
Total Power Dissipation[W]
262
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
특징 :
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
- Qualified to AEC-Q101
