신규 설계 비추천
RJ1P12BBD
Nch 100V 120A 파워 MOSFET
RJ1P12BBD
신규 설계 비추천
RJ1P12BBD
Nch 100V 120A 파워 MOSFET
기존 고객을 서포트하기 위해 생산하는 제품입니다. 신규 설계용으로는 판매하지 않습니다.
Product Detail
RJ1P12BBD 대체품
| Part Number |
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|
|
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|
|---|---|---|---|
| Ordering Part Number | RJ1P12BBDTLL | RJ1P10BBHTL1 | RS6P100BHTB1 |
| Similar Level | - | Same Pinout | Similar Specification |
| Data Sheet | |||
| Supply Status | Not Recommended for New Designs | Recommended | Recommended |
| Package | TO-263AB (LPTL) | TO-263AB-3LSHYAD | HSOP8 (Single) |
| Unit Quantity | 1000 | 800 | 2500 |
| Minimum Packing Quantity | 1000 | 800 | 2500 |
| Packing Type | Taping | Taping | Taping |
| RoHS | Yes | Yes | Yes |
| Package Code | TO-263AB | TO-263AB | HSOP8S (5x6) |
| Package Size [mm] | 10.1x9 (t=4.7) | 10.11×15.1 (t=4.77) | 4.9x6 (t=1.1) |
| Number of terminal | 3 | 3 | 8 |
| Polarity | Nch | Nch | Nch |
| Drain-Source Voltage VDSS [V] | 100 | 100 | 100 |
| Drain Current ID [A] | 120.0 | 170.0 | 100.0 |
| RDS(on)[O] VGS=6V (Typ.) | - | 0.0028 | 0.0058 |
| RDS(on)[O] VGS=10V (Typ.) | 0.0044 | 0.0023 | 0.0045 |
| RDS(on)[O] VGS=Drive (Typ.) | 0.0052 | 0.0028 | 0.0058 |
| Drive Voltage [V] | 6.0 | 6.0 | 6.0 |
| Power Dissipation (PD) [W] | 178.0 | 189.0 | 104.0 |
| Total gate charge Qg [nC] | 51.0 | 89.0 | 29.0 |
| Trr (Typ.)[ns] | - | 90 | 63 |
| Mounting Style | Surface mount | Surface mount | Surface mount |
| Applications | - | Switching | - |
| Bare Die P/N | Available: K3706 | - | - |
| Storage Temperature (Min.)[°C] | -55 | -55 | -55 |
| Storage Temperature (Min.)[°C] | 150 | 150 | 150 |
