SCS230AE2
SiC 쇼트키 배리어 다이오드
SCS230AE2
SiC 쇼트키 배리어 다이오드
SCS230AE2는 Low VF로 고속 스위칭이 가능한 SiC 쇼트키 배리어 다이오드입니다. ３pin 패키지입니다.
Product Detail
사양 :
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
30
Generation
2nd Gen
Total Power Dissipation[W]
230
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
특징 :
・짧은 리커버리 시간・고속 스위칭 가능
・특성의 온도 의존성이 적음
레퍼런스 디자인 / 어플리케이션 평가 Kit
-
- Reference Design - REF67010
- 3.6kW Interleaved Boost PFC
The REF67010-IPFC_3.6kW-EVK-A04 is a Reference Board with Interleaved Boost PFC topology. It demostrates ROHM’s strong power devices portfolio i.e., high speed switching device Field Trench IGBT and SiC SBD diodes in the Boost Stage. The Auxiliary power supply uses PWM type DC/DC converter IC with 800V Integrated MOSFET and Super-Fast Recovery Diode. The converter is rated at 3.6kW.
This reference design consists of the following three boards.- REF67010-IPFC_3.6kW-EVK-A04_PCBA016: Main board
- REF67010-IPFC_3.6kW-EVK-A04_PCBA017: Auxiliary power supply board
- REF67010-IPFC_3.6kW-EVK-A04_PCBA018: Controller board
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