S6602 (신제품)
1200V, 10A, Silicon-carbide (SiC) SBD Bare Die
S6602
S6602 (신제품)
1200V, 10A, Silicon-carbide (SiC) SBD Bare Die
S6602 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. Reducing switching loss, enabling high-speed switching operation.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
Data Sheet
* 본 제품은 STANDARD GRADE 제품입니다.
이 제품은 차재 기기의 사용을 권장하지 않습니다.
이 제품은 차재 기기의 사용을 권장하지 않습니다.
Product Detail
사양 :
Reverse Voltage[V]
1200
Continuous Forward Current[A]
10
Generation
3rd Gen
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
특징 :
- Low forward voltage
- Negligible recovery time/current
- Temperature independent switching behavior
- High surge current capability
