BSM400D12P3G002
1200V, 358A, Half-bridge Trench MOS 내장 Full SiC 파워 모듈
BSM400D12P3G002
1200V, 358A, Half-bridge Trench MOS 내장 Full SiC 파워 모듈
BSM400D12P3G002는 로옴의 SiC-UMOSFET와 SiC-SBD로 구성된, Half-bridge 타입 Full SiC 파워 모듈입니다. 모터 구동, 인버터, 컨버터, 태양광 발전, 풍력 발전, 유도 가열 장치 등에 적합합니다.
Product Detail
사양 :
Drain-source Voltage[V]
1200
Drain Current[A]
358
Total Power Dissipation[W]
1570
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Half-bridge
Package Size [mm]
152.0x62.0 (t=18.0)
특징 :
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
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