BSM180D12P2E002
1200V, 204A, Half bridge, Silicon-carbide (SiC) Power Module
BSM180D12P2E002
BSM180D12P2E002
1200V, 204A, Half bridge, Silicon-carbide (SiC) Power Module
This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
Product Detail
사양 :
Drain-source Voltage[V]
1200
Drain Current[A]
204
Total Power Dissipation[W]
1360
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
152x57.95 (t=18)
특징 :
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Reference Design / Application Evaluation Kit
-
- Drive Board - BSMGD2G12D24-EVK001
This evaluation board, BSMGD2G12D24-EVK001, is a gate driver board for full SiC Modules with the 2nd Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module
-
- Snubber Module - MGSM1D72J2-145MH16
Snubber Module for BSM series (1200V, E / G type)
-
- Drive Board - TAMURA 2DU series
Drive Board for BSM series (1200V, C / E / G type)
