ROHM Product Detail

BSM120D12P2C005
SiC 파워 모듈

로옴의 SiC 디바이스를 사용한 Half bridge 구성의 Full SiC 파워 모듈입니다.

Data Sheet 구입 *
* 본 제품은 STANDARD GRADE 제품입니다.
이 제품은 차재 기기의 사용을 권장하지 않습니다.
Data Sheet 구입 *

Product Detail

 
형명 | BSM120D12P2C005
상태 | 추천품
패키지 | C Type
포장 사양 | Corrugated Cardboard
포장 수량 | 12
최소 포장 단위 | 12
RoHS | Yes

사양 :

Drain-source Voltage[V]

1200

Drain Current[A]

134

Total Power Dissipation[W]

935

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Half-bridge

Package Size [mm]

122.0x45.6 (t=17.5)

Find Similar

특징 :

・Full SiC power module with SiC MOSFET and SiC SBD
・High-speed switching and low switching loss
・Ensured reliability of body diode conduction

레퍼런스 디자인 / 어플리케이션 평가 Kit

 
    • Drive Board - BSMGD3C12D24-EVK001

    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH26

    • Snubber Module for BSM series (1200V, C type)

    • Drive Board - TAMURA 2DU series

    • Drive Board for BSM series (1200V, C / E / G type)

    •
X

Most Viewed