Silicon carbide Power Module - BSM120C12P2C201
This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
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사양 :
Drain-source Voltage[V]
1200
Drain Current[A]
134.0
Total Power Dissipation[W]
935
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Chopper
특징 :
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.