SCT4026DW7HR (신제품)
750V, 51A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

AEC-Q101 qualified automotive grade product. SCT4026DW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Product Detail

형명 | SCT4026DW7HRTL
상태 | 추천품
패키지 | TO-263-7L
포장 수량 | 1000
최소 포장 단위 | 1000
포장 사양 | Taping
RoHS | Yes

사양 :

Drain-source Voltage[V]


Drain-source On-state Resistance(Typ.)[mΩ]



4th Gen (Trench)

Drain Current[A]


Total Power Dissipation[W]


Junction Temperature(Max.)[°C]


Storage Temperature (Min.)[°C]


Storage Temperature (Max.)[°C]


Package Size [mm]

10.2x15.4 (t=4.7)

Common Standard

AEC-Q101 (Automotive Grade)

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특징 :

  • Qualified to AEC-Q101
  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant