SCT3080KW7
1200V 30A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3080KW7
1200V 30A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3080KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Product Detail
사양 :
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
3rd Gen (Trench)
Drain Current[A]
30
Total Power Dissipation[W]
159
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.4x10.2 (t=4.7)
특징 :
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
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