SCT4018KW7 (신제품)
1200V, 75A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT4018KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Data Sheet 구입 *
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Product Detail

 
형명 | SCT4018KW7TL
상태 | 추천품
패키지 | TO-263-7L
포장 수량 | 1000
최소 포장 단위 | 1000
포장 사양 | Taping
RoHS | Yes

사양 :

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

18

Generation

4th Gen (Trench)

Drain Current[A]

75

Total Power Dissipation[W]

267

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

10.2x15.4 (t=4.7)

Find Similar

특징 :

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant