BM61M22BFJ-C
절연전압 2500Vrms 절연소자 내장 1ch 게이트 드라이버
BM61M22BFJ-C
절연전압 2500Vrms 절연소자 내장 1ch 게이트 드라이버
절연전압 2500Vrms, 최대 입출력 지연시간 60ns, 최소 입력 펄스 폭 60ns의 절연소자 내장 게이트 드라이버입니다. 저전압 시 오동작 방지 기능 (UVLO)을 내장하고 있습니다.
Product Detail
기능 안전:
사양 :
Isolation Voltage[Vrms]
2500
Channel
1
Vcc1(Min.)[V]
4.5
Vcc1(Max.)[V]
5.5
Vcc2(Min.)[V]
9
Vcc2(Max.)[V]
24
Iout(Max.)[A]
2
I/O Delay Time(Max.)[ns]
60
Min. Input Pulse Width[ns]
60
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
125
Switching Controller
No
Temperature Monitor
No
Package Size [mm]
6x4.9 (t=1.6)
Common Standard
AEC-Q100 (Automotive Grade)
특징 :
- AEC-Q100 Qualified (Grade1)
- Providing Galvanic Isolation
- Under-voltage Lockout Function
- UL1577 Recognized: File No. E356010
Reference Design / Application Evaluation Kit
-
- Evaluation Board - BM61M22BFJ-EVK001
The BM61M22BFJ-EVK001 board can be driving MOSFET and IGBT Power Devices. The Input-side power supply voltage is from 4.5 to 5.5 V. The output-side power supply is from 9 to 24 V. The BM61M22BFJ-C has Power Supply protections which are the Under Voltage Lockout (UVLO) function at Input-side and Output-side. The BM61M22BFJ-EVK001 allows designers to evaluate Rohm’s Gate Driver family for various applications.
-
- Evaluation Board - BM61M22BFJ-EVK002
The BM61M22BFJ-EVK002 board can be driving two MOSFET and IGBT Power Devices such as for High-side and Low-side on Half Bridge application. The Input-side power supply voltage is from 4.5 to 5.5 V. The output-side power supply is from 9 to 24 V. The BM61M22BFJ-C has Power Supply protections which are the Under-Voltage Lockout (UVLO) function at Input-side and Output-side. The BM61M22BFJ-EVK002 allows designers to evaluate Rohm’s Gate Driver family for various applications.
