RQ3E120BN
Nch 30V 12A 미들파워 MOSFET

하이파워 패키지 (HSMT8)의 RQ3E120BN은 저 ON 저항으로 스위칭 용도에 최적입니다.

Data Sheet 구입 *
* 본 제품은 STANDARD GRADE 제품입니다.
이 제품은 차재 기기의 사용을 권장하지 않습니다.

Product Detail

 
형명 | RQ3E120BNTB
상태 | 구입 가능
패키지 | HSMT8 (Single,TB)
포장 사양 | Taping
포장 수량 | 3000
최소 포장 단위 | 3000
RoHS | Yes

사양 :

Package Code

HSMT8

Applications

Switching, Motor

Number of terminal

8

Polarity

Nch

Drain-Source Voltage VDSS[V]

30

Drain Current ID[A]

21

RDS(on)[Ω] VGS=4.5V(Typ)

0.0086

RDS(on)[Ω] VGS=10V(Typ)

0.0066

RDS(on)[Ω] VGS=Drive (Typ)

0.0086

Total gate charge Qg[nC]

14

Power Dissipation (PD)[W]

16

Drive Voltage[V]

4.5

Mounting Style

Surface mount

Bare Die Part Number

Available: K4012

Storage Temperature (Min)[℃]

-55

Storage Temperature (Max)[℃]

150

Package Size [mm]

3.3x3.3 (t=0.9)

Find Similar

특징 :

  • Low on - resistance.
  • High Power Package (HSMT8).
  • Pb-free lead plating; RoHS compliant.
  • Halogen Free

Design Resources

 
List View
Search: ×

Documents

Technical Articles

Tools

Packaging & Quality

Videos & Catalogs

 

제품 동영상 일람
100V Power MOSFET for AI Servers RY7P250BM
2025-05-22 00:00:00.0 ( 2:47 )
Developed the RY7P250BM, a 100V power MOSFET that combines Wide-SOA and low on-resistance, making it ideal for hot-swap circuits in AI servers.
Developed the RY7P250BM, a 100V power MOSFET that combines Wide-SOA and low on-resistance, making it ideal for hot-swap circuits in AI servers.

제품 동영상 일람
Low ON-Resistance Nch Power MOSFETs RS6/RH6 Series
2023-05-15 00:00:00.0 ( 2:09 )
These products utilize ROHM’s latest generation fine element structure that significantly reduces ON resistance per unit area.
These products utilize ROHM’s latest generation fine element structure that significantly reduces ON resistance per unit area.
X

Most Viewed