RQ1E100XN
N-channel 30V 10A 소신호 MOSFETProduct Detail
사양 :
Package Code
TSMT8
Applications
Switching
Number of terminal
8
Polarity
N
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
10
RDS(on)[Ω] VGS=4V(Typ)
0.01
RDS(on)[Ω] VGS=4.5V(Typ)
0.0095
RDS(on)[Ω] VGS=10V(Typ)
0.0075
RDS(on)[Ω] VGS=Drive (Typ)
0.01
Total gate charge Qg[nC]
12.7
Power Dissipation (PD)[W]
1.5
Drive Voltage[V]
4
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.8x3.0 (t=0.85)
특징 :
· 4V 구동 타입· N채널 중간 전력 MOSFET
· 고속 스위칭 속도
· 소형 표면 실장 패키지
· 무연 / RoHS 준수
