RGT8TM65D
단락 내량 5µs, 650V 4A, FRD 내장, TO-220NFM, Field Stop Trench IGBT
RGT8TM65D
단락 내량 5µs, 650V 4A, FRD 내장, TO-220NFM, Field Stop Trench IGBT
RGT8TM65D는 Low VCE(sat)의 Field Stop Trench IGBT입니다. 인버터, UPS, 파워 컨디셔너, 용접기 등의 용도에 최적입니다.
Product Detail
사양 :
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
3
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
71
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
16
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.0x10.0 (t=4.8)
특징 :
- Low Collector - Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5μs
- Built in Very Fast & Soft Recovery FRD (RFN - Series)
- Pb - free Lead Plating ; RoHS Compliant
