RGT30NS65D(LPDS)
단락 내량 5µs, 650V 15A, FRD 내장, LPDS, Field Stop Trench IGBT
신규 설계 비추천
RGT30NS65D(LPDS)
단락 내량 5µs, 650V 15A, FRD 내장, LPDS, Field Stop Trench IGBT
기존 고객을 서포트하기 위해 생산하는 제품입니다. 신규 설계용으로는 판매하지 않습니다.
Product Detail
사양 :
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
15
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
75
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
133
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
13.1x10.1 (t=4.7)
특징 :
1) Low Collector - Emitter Saturation Voltage2) Low Switching Loss
3) Short Circuit Withstand Time 5us
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant
