LLC converter (Half Bridge, Diode Rectification)
Description
This topology can achieve ZVS (primary side switch) and ZCS operation (secondary side switch) simultaneously. It realizes low noise and high efficiency by generating a sinusoidal current waveform with the switch network and resonant circuit.
This circuit consists of a half-bridge switch circuit on the primary side and a diode bridge on the secondary side, it is used for relatively lower power (500W or less)
Circuit
Key Products
| Product Category | Product Family | Product Number | Feature |
|---|---|---|---|
| Switch | 750V SiC MOSFET | SCT4xxxDx series NEW | The latest SiC MOSFET device. Enhanced low on-resistance enable best in class performance. It supports 750 V withstand voltage, ensuring a higher operating margin than conventional products, and can be used safely. |
| 650V SiC MOSFET | SCT3xxxAx series | Trench-gate SiC MOSFET with low on-resistance (50% reduction) compared to conventional products. | |
| Rectifier diode | 650V Si FRD | RFS series | Lower Vf than RSV series, but ultra fast switching capability |
| RFL series | Improve fast switching capability than RFN series. | ||
| 600V Si FRD | RFUH series | Small trr enable fast switching capability, RFUH series compatible to automotive use case. | |
| Gate Driver | Galvanic Isolated gate driver | BM61x4xRFV | 1ch configuration, 3,750Vrms isolated type Gate Driver, can be used for switching devices with current source pins. |
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