• DCDC

Dual Active Bridge Converter (DAB)

Description

This converter has bridges on the primary and secondary sides of the transformer. It performs bi-directional power conversion by controlling the phase between the reference phase (primary side bridge) and the control phase (secondary side bridge). ZVS is possible, and it is popular for power supply of high-voltage, high-power storage systems such as EV and power conditioners.

Overview

- Support Bi-directional operation
- SiC MOSFET contribute high efficiency
- Output voltage may be changed depending on battery voltage
- By stacking DAB circuits, it is possible to support more higher voltage

Circuit

Circuit

Key Products

Product CategoryProduct familyProduct NumberFeature
Transistor (Primary side)1200V SiC MOSFETSCT4xxxKx series NEWThe latest SiC MOSFET device. Enhanced low on-resistance enable best in class performance. It supports 1200V withstand voltage, ideal for higher voltage applications.
SCT3xxxKx series1200V SiC MOSFET with high voltage torelance and low power dissipation.
SiC Power moduleBSMxxD12/D17Pxx1200V/1700V SiC Power module with Half bridge topology
Transistor (Secondary side)750V SiC MOSFETSCT4xxxDx series NEWThe latest SiC MOSFET device. Enhanced low on-resistance enable best in class performance. It supports 750 V withstand voltage, ensuring a higher operating margin than conventional products, and can be used safely.
650V SiC MOSFETSCT3xxxAx seriesTrench-gate SiC MOSFET with low on-resistance (50% reduction) compared to conventional products
SiC Power moduleBSMxxD12/D17Pxx1200V/1700V SiC Power module with Half bridge topology
Gate Driver3750V voltage toleranceBM61x4xRFV1ch configuration, 3,750Vrms isolated type Gate Driver, can be used for switching devices with current source pins.

Simulation

Coming soon

Related Topologies

LLC Converter (Full Bridge, Diode Bridge)