SCS306AJ - 기술 자료

SCS306AJ은 SiC 쇼트키 배리어 다이오드입니다. 스위칭 손실을 저감하여 고속 스위칭이 가능합니다.

* 본 제품은 STANDARD GRADE 제품입니다. 이 제품은 차재 기기의 사용을 권장하지 않습니다.

White Paper

Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
 
In recent years, the advancing digitization of applications is expanding the number and role of electronic circuits, resulting in a considerable amount of man-hours spent on circuit design, from component selection during application development to board design and evaluation. This document discribes the solution for solving customer issues for each design flow with ROHM's support and tools.

Application Note

Calculation of Power Dissipation in Switching Circuit
 
This application note describes how to calculate the power dissipation that occurs in a SiC MOSFET in a switching circuit with the SiC MOSFET during switching operations.
Notes for Temperature Measurement Using Thermocouples
 
This application note explains cautions regarding the temperature measurement. The content of this application note is generally applicable, irrespective of the types of semiconductor devices.
Two-Resistor Model for Thermal Simulation
 
This application note explains the two-resistor model, which is the simplest model among thermal models used in thermal simulations. The thermal simulations mentioned three-dimensional model thermal conduction and thermal fluid analysis tools.
Notes for Temperature Measurement Using Forward Voltage of PN Junction
 
This application note explains cautions regarding the temperature measurement Using Forward Voltage of PN Junction. The content of this application note is generally applicable, irrespective of the types of semiconductor devices.
열 모델이란 (SiC 파워 디바이스)
 
열 모델 (서멀 모델)에 대한 설명입니다.
열 모델의 사용 방법 (SiC 파워 디바이스)
 
열 모델 (서멀 모델)의 사용 방법에 대한 설명입니다.
Method for Monitoring Switching Waveform
 
This application note explains how to correctly monitor the switching waveforms of the power device element such as switching power supply or a motor drive circuit.
Application Note for SiC Power Devices and Modules
 
Learn more about silicon carbide and its use in ROHMs SiC Power Devices and Modules.
Part Explanation
 
For SiC Schottky Barrier Diodes
Impedance Characteristics of Bypass Capacitor
 
This application note focuses on the impedance characteristics of capacitors, and explains cautions for selecting bypass capacitors.