SCS302AH
650V, 2A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD
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SCS302AH
650V, 2A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD
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Product Detail
사양 :
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
2
Generation
3rd Gen
Total Power Dissipation[W]
22
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.6x10.2 (t=4.7)
특징 :
- Shorter recovery time
- Reduced temperature dependence
- High-speed switching possible
- High surge current capability