SCS215AE - 기술 자료

SCS215AE는 Low VF로 고속 스위칭이 가능한 SiC 쇼트키 배리어 다이오드입니다.

* 본 제품은 STANDARD GRADE 제품입니다. 이 제품은 차재 기기의 사용을 권장하지 않습니다.

Application Note

Notes for Temperature Measurement Using Thermocouples
 
This application note explains cautions regarding the temperature measurement. The content of this application note is generally applicable, irrespective of the types of semiconductor devices.
Two-Resistor Model for Thermal Simulation
 
This application note explains the two-resistor model, which is the simplest model among thermal models used in thermal simulations. The thermal simulations mentioned three-dimensional model thermal conduction and thermal fluid analysis tools.
Notes for Temperature Measurement Using Forward Voltage of PN Junction
 
This application note explains cautions regarding the temperature measurement Using Forward Voltage of PN Junction. The content of this application note is generally applicable, irrespective of the types of semiconductor devices.
열 모델이란 (SiC 파워 디바이스)
 
열 모델 (서멀 모델)에 대한 설명입니다.
열 모델의 사용 방법 (SiC 파워 디바이스)
 
열 모델 (서멀 모델)의 사용 방법에 대한 설명입니다.
Method for Monitoring Switching Waveform
 
This application note explains how to correctly monitor the switching waveforms of the power device element such as switching power supply or a motor drive circuit.
Application Note for SiC Power Devices and Modules
 
Learn more about silicon carbide and its use in ROHMs SiC Power Devices and Modules.
Part Explanation
 
For SiC Schottky Barrier Diodes