BSM600D12P4G103
1200V, 567A, 하프 브리지, 트렌치 MOSFET 내장 Full SiC 파워 모듈
BSM600D12P4G103
1200V, 567A, 하프 브리지, 트렌치 MOSFET 내장 Full SiC 파워 모듈
BSM600D12P4G103는 SiC-UMOSFET으로 구성된 하프 브리지 모듈로, 모터 구동, 인버터, 컨버터, 태양광 발전, 풍력 발전, 유도가열 장비에 적합합니다.
Product Detail
사양 :
Drain-source Voltage[V]
1200
Drain Current[A]
567
Total Power Dissipation[W]
1780
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Half-Bridge
Package Size [mm]
152.0x62.0 (t=18.0)
특징 :
- 낮은 서지, 낮은 스위칭 손실.
- 고속 스위칭 가능.
- 온도 의존성 저감.
레퍼런스 디자인 / 어플리케이션 평가 Kit
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- Drive Board - BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
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- Snubber Module - MGSM1D72J2-145MH16
Snubber Module for BSM series (1200V, E / G type)
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- Reference Design - REF69001
- Half-Bridge Drive for SiC Case Module
In power distribution applications including renewable energy, which handles large amounts of power, the use of SiC is accelerating in order to improve efficiency, miniaturize, and lighten the design. SiC, which has higher-speed and higher-efficiency characteristics compared to conventional IGBTs, presents challenges in design, such as gate drive and short-circuit protection, leading to increased design effort. The gate drive board for SiC case modules developed by TAMURA Corporation is matched in gate voltage, gate resistance, and short-circuit characteristics for 4th generation SiC modules, enabling users to begin evaluation easily and perform highly reliable testing. Furthermore, this board is suitable for mass production and can be directly integrated into mass production equipment, thus contributing to a reduction in design effort and cost reduction.
For details on the board and customization options, please contact below.
https://www.tamuracorp.com/global/products/gate-drivers/powermodule/detail/rohm.html