1200V, 576A, Half bridge, Full SiC-Power Module with Trench MOSFET - BSM600D12P3G001
BSM600D12P3G001 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
Total Power Dissipation[W]
Storage Temperature (Min.)[°C]
Storage Temperature (Max.)[°C]
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.