BSM600D12P3G001
1200V, 576A, Half-bridge Trench MOS 내장 Full SiC 파워 모듈
신규 설계 비추천
BSM600D12P3G001
1200V, 576A, Half-bridge Trench MOS 내장 Full SiC 파워 모듈
기존 고객을 서포트하기 위해 생산하는 제품입니다. 신규 설계용으로는 판매하지 않습니다.
Product Detail
사양 :
Drain-source Voltage[V]
1200
Drain Current[A]
576
Total Power Dissipation[W]
2450
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Half-bridge
Package Size [mm]
152.0x62.0 (t=18.0)
특징 :
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
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