1200V, 576A, Half bridge, Full SiC-Power Module with Trench MOSFET - BSM600D12P3G001

BSM600D12P3G001 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.

* 본 제품은 STANDARD GRADE 제품입니다. 이 제품은 차재 기기의 사용을 권장하지 않습니다.
형명 | BSM600D12P3G001
상태 | 추천품
패키지 | G
포장 수량 | 4
최소 포장 단위 | 4
포장 사양 | Corrugated Cardboard
RoHS | Yes

사양 :

Drain-source Voltage[V]

1200

Drain Current[A]

576.0

Total Power Dissipation[W]

2450

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

특징 :

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.