BSM600C12P3G201
1200V, 576A, 초퍼 Trench MOS 내장 Full SiC 파워 모듈
최종 판매
BSM600C12P3G201
1200V, 576A, 초퍼 Trench MOS 내장 Full SiC 파워 모듈
제조 중지를 신청중인 제품입니다.
Product Detail
사양 :
Drain-source Voltage[V]
1200
Drain Current[A]
576
Total Power Dissipation[W]
2460
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Chopper
Package Size [mm]
152.0x62.0 (t=18.0)
특징 :
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
레퍼런스 디자인 / 어플리케이션 평가 Kit
-
- Drive Board - BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module - MGSM1D72J2-145MH16
Snubber Module for BSM series (1200V, E / G type)
