BSM400D12P3G002
1200V, 358A, Half-bridge Trench MOS 내장 Full SiC 파워 모듈
BSM400D12P3G002
BSM400D12P3G002
1200V, 358A, Half-bridge Trench MOS 내장 Full SiC 파워 모듈
BSM400D12P3G002는 로옴의 SiC-UMOSFET와 SiC-SBD로 구성된, Half-bridge 타입 Full SiC 파워 모듈입니다. 모터 구동, 인버터, 컨버터, 태양광 발전, 풍력 발전, 유도 가열 장치 등에 적합합니다.
Product Detail
사양 :
Drain-source Voltage[V]
1200
Drain Current[A]
358
Total Power Dissipation[W]
1570
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
152x62 (t=18)
특징 :
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Reference Design / Application Evaluation Kit
-
- Drive Board - BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module - MGSM1D72J2-145MH16
Snubber Module for BSM series (1200V, E / G type)
-
- Drive Board - TAMURA 2DU series
Drive Board for BSM series (1200V, C / E / G type)
