BSM300D12P2E001
SiC 파워 모듈

BSM300D12P2E001은 로옴의 SiC-DMOSFET와 SiC-SBD로 구성된 2in1 SiC 파워 모듈입니다.

Data Sheet 구입 *
* 본 제품은 STANDARD GRADE 제품입니다.
이 제품은 차재 기기의 사용을 권장하지 않습니다.
Data Sheet 구입 *

Product Detail

 
형명 | BSM300D12P2E001
상태 | 추천품
패키지 | E
포장 수량 | 4
최소 포장 단위 | 4
포장 사양 | Corrugated Cardboard
RoHS | Yes

사양 :

Drain-source Voltage[V]

1200

Drain Current[A]

300

Total Power Dissipation[W]

1875

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

152x57.95 (t=18)

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특징 :

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD2G12D24-EVK001

    • This evaluation board, BSMGD2G12D24-EVK001, is a gate driver board for full SiC Modules with the 2nd Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module

    • User Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

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