ROHM Product Detail

BSM180D12P3C007
SiC 파워 모듈

로옴의 SiC-UMOSFET를 사용한 Half bridge 구성의 SiC MOSFET 모듈입니다.

Data Sheet 구입 *
* 본 제품은 STANDARD GRADE 제품입니다.
이 제품은 차재 기기의 사용을 권장하지 않습니다.
Data Sheet 구입 *

Product Detail

 
형명 | BSM180D12P3C007
상태 | 추천품
패키지 | C Type
포장 사양 | Corrugated Cardboard
포장 수량 | 12
최소 포장 단위 | 12
RoHS | Yes

사양 :

Drain-source Voltage[V]

1200

Drain Current[A]

180

Total Power Dissipation[W]

880

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Half-bridge

Package Size [mm]

122.0x45.6 (t=17.5)

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특징 :

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

레퍼런스 디자인 / 어플리케이션 평가 Kit

 
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