BSM180D12P3C007
SiC 파워 모듈
BSM180D12P3C007
SiC 파워 모듈
로옴의 SiC-UMOSFET를 사용한 Half bridge 구성의 SiC MOSFET 모듈입니다.
Product Detail
사양 :
Drain-source Voltage[V]
1200
Drain Current[A]
180
Total Power Dissipation[W]
880
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Half-bridge
Package Size [mm]
122.0x45.6 (t=17.5)
특징 :
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
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