SiC 파워 모듈 - BSM180D12P3C007
로옴의 SiC-UMOSFET를 사용한 Half bridge 구성의 SiC MOSFET 모듈입니다. 
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사양 :
Drain-source Voltage[V]
1200
Drain Current[A]
180.0
Total Power Dissipation[W]
880
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
특징 :
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.