SCT4062KW7HR (신제품)
1200V, 24A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

AEC-Q101 qualified automotive grade product. SCT4062KW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Product Detail

 
형명 | SCT4062KW7HRTL
상태 | 추천품
패키지 | TO-263-7L
포장 수량 | 1000
최소 포장 단위 | 1000
포장 사양 | Taping
RoHS | Yes

사양 :

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

62

Generation

4th Gen (Trench)

Drain Current[A]

24

Total Power Dissipation[W]

93

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

10.2x15.4 (t=4.7)

Common Standard

AEC-Q101 (Automotive Grade)

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특징 :

  • Qualified to AEC-Q101
  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant