SCT3060AW7
650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3060AW7
SCT3060AW7
650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3060AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Product Detail
사양 :
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
60
Generation
3rd Gen (Trench)
Drain Current[A]
38
Total Power Dissipation[W]
159
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.2x15.4 (t=4.7)
특징 :
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
