S4001
650V, 70A, Silicon-carbide (SiC) MOSFET Bare Die
S4001
650V, 70A, Silicon-carbide (SiC) MOSFET Bare Die
S4001 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage withstand capability, low ON-state resistance, and fast switching speed.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
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Product Detail
사양 :
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
30
Generation
3rd Gen
Drain Current[A]
70
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
특징 :
· Low ON resistance· Fast switching speed
· Fast revese recovery
· Easy to parallel
· Simple to drive