LTR10LEZPJS
저저항 고전력 칩 저항기 / 장변 전극품
LTR10LEZPJS
저저항 고전력 칩 저항기 / 장변 전극품
로옴의 고전력 칩 저항기 LTR 시리즈는 장변 방향으로 전극을 배치함으로써, 정격전력을 범용 칩 저항기에 비해 대폭 향상시켰습니다. 또한, 전극간 거리가 짧아짐에 따라 우수한 접합 신뢰성을 실현합니다.
Product Detail
사양 :
Automotive grade
Yes
Size[mm](inch)
1220(0508)
Rated Power[W]
1
Resistance Tolerance
J (±5%)
Resistance range[Ω]
0.033 to 0.12
Resistance(Min.)[Ω]
0.033
Resistance(Max.)[Ω]
0.12
Temperature Coefficient[ppm/°C]
0 to 150
Operating Temperature[°C]
-55 to 155
Type
For current sensing (Wide terminal)
Operating Temperature (Max.)[°C]
155
Common Standard
AEC-Q200 (Automotive Grade)
특징 :
- Chip Resistors for current detection: 10mΩ~
- High joint reliability with long side terminations.
- Improvement of rated power enables to displace smaller size of resistors, and it contributes space savings in your set.
- ROHM resistors have obtained ISO9001 / TS16949 certification.
- Corresponds to AEC-Q200.
Reference Design / Application Evaluation Kit
-
- Reference Design - REFLD002
- Laser Driver Reference Design with GaN HEMT for High-Resolution LiDAR
The range of uses for LiDAR sensors is expanding to include not only autonomous driving, but also applications in the industrial and infrastructure fields. LiDAR sensors are required to have longer sensing distance and higher resolution, and in addition to improving the characteristics of the laser diode, it is necessary to drive the laser diode at higher speeds and power. ROHM offers a lineup of 905nm high power narrow emission width laser diodes. (RLD90QZWx Series) Reference designs are available that includes EcoGAN™, a next-generation device capable of high-speed drive, along with a high-speed gate driver for GaN HEMTs that contribute to improved LiDAR sensor characteristics (distance and resolution) .
- Enables high-speed driving of laser diodes - a key device in LiDAR applications
- Includes next-gen EcoGaN™ devices
- Built-in high-speed gate driver for GaN HEMTs (BD2311NVX-C)
- Two circuit types: square wave and resonant
