LTR100LJZPFU
고전력 칩 저항기 / 장변 전극품
LTR100LJZPFU
고전력 칩 저항기 / 장변 전극품
로옴의 고전력 칩 저항기는 장변 방향으로 전극을 배치하여, 범용 칩 저항기 대비 정격전력을 대폭 향상시켰습니다. 또한, 전극간 거리가 짧아짐에 따라 우수한 접합 신뢰성을 실현할 수 있습니다.
Lineup
Product Detail
사양 :
Automotive grade
Yes
Size[mm](inch)
3264(1225)
Rated Power[W]
4
Resistance Tolerance
F (±1%)
Resistance range[Ω]
10m
Resistance(Min.)[Ω]
0.01
Resistance(Max.)[Ω]
0.01
Temperature Coefficient[ppm/°C]
0 ~ 300
Operating Temperature[°C]
-65 to 155
Type
Wide terminal
Operating Temperature (Max.)[°C]
155
Common Standard
AEC-Q200 (Automotive Grade)
특징 :
ᆞ정격전력 대폭 향상ᆞ온도 사이클에 대한 접합 강도 향상
ᆞ서지 보호 특성 향상
Reference Design / Application Evaluation Kit
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- Reference Design - REFLD002
- Laser Driver Reference Design with GaN HEMT for High-Resolution LiDAR
The range of uses for LiDAR sensors is expanding to include not only autonomous driving, but also applications in the industrial and infrastructure fields. LiDAR sensors are required to have longer sensing distance and higher resolution, and in addition to improving the characteristics of the laser diode, it is necessary to drive the laser diode at higher speeds and power. ROHM offers a lineup of 905nm high power narrow emission width laser diodes. (RLD90QZWx Series) Reference designs are available that includes EcoGAN™, a next-generation device capable of high-speed drive, along with a high-speed gate driver for GaN HEMTs that contribute to improved LiDAR sensor characteristics (distance and resolution) .
- Enables high-speed driving of laser diodes - a key device in LiDAR applications
- Includes next-gen EcoGaN™ devices
- Built-in high-speed gate driver for GaN HEMTs (BD2311NVX-C)
- Two circuit types: square wave and resonant
