ROHM Product Detail

신규 설계 비추천 BR25H128F-2LB(H2)
125℃ 동작 SPI BUS 128kbit (16k x 8bit) EEPROM

기존 고객을 서포트하기 위해 생산하는 제품입니다. 신규 설계용으로는 판매하지 않습니다.

Product Detail

 
형명 | BR25H128F-2LBH2
패키지 | SOP8
포장 사양 | Taping
포장 수량 | 250
최소 포장 단위 | 250
RoHS | Yes

사양 :

Series

BR25H-2LB

Density [bit]

128K

Bit Format [Word x Bit]

16K x 8

Vcc(Min.)[V]

2.5

Vcc(Max.)[V]

5.5

Circuit Current (Max.)[mA]

5.5

Standby Current (Max.)[μA]

10

Write Cycle (Max.)[ms]

4

Input Frequency (Max.)[Hz]

10M

Endurance (Max.)[Cycle]

106

Data Retention (Max.)[Year]

40

I/F

SPI BUS

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

125

Package Size [mm]

5.0x6.2 (t=1.71)

특징 :

· Long time support a product for Industrial applications.
· High speed clock action up to 10MHz (Max.)
· Wait function by HOLDB terminal.
· Part or whole of memory arrays settable as read only
memory area by program.
· 2.5V to 5.5V single power source action most
suitable
for battery use.
· Page write mode useful for initial value write at
factory shipment.
· For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)
· Self-timed programming cycle.
· Low Supply Current
At write operation (5V) : 1.2mA (Typ.)
At read operation (5V) : 1.0mA (Typ.)
At standby operation (5V) : 0.1µA (Typ.)
· Address auto increment function at read operation
· Prevention of write mistake
Write prohibition at power on.
Write prohibition by command code (WRDI).
Write prohibition by WPB pin.
Write prohibition block setting by status registers
(BP1, BP0).
Prevention of write mistake at low voltage.
· Data at shipment Memory array: FFh, status register
WPEN, BP1, BP0 : 0
· More than 100 years data retention.
· More than 1 million write cycles.
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