ROHM Product Detail

신규 설계 비추천 BR25G512FJ-3
SPI BUS EEPROM

기존 고객을 서포트하기 위해 생산하는 제품입니다. 신규 설계용으로는 판매하지 않습니다.

Product Detail

 
형명 | BR25G512FJ-3GE2
패키지 | SOP-J8
포장 사양 | Taping
포장 수량 | 2500
최소 포장 단위 | 2500
RoHS | Yes

사양 :

Series

BR25G-3

Density [bit]

512K

Bit Format [Word x Bit]

64K x 8

Vcc(Min.)[V]

1.8

Vcc(Max.)[V]

5.5

Circuit Current (Max.)[mA]

4

Standby Current (Max.)[μA]

1

Write Cycle (Max.)[ms]

5

Input Frequency (Max.)[Hz]

10M

Endurance (Max.)[Cycle]

106

Data Retention (Max.)[Year]

100

I/F

SPI BUS

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

85

Package Size [mm]

4.9x6.0 (t=1.65)

특징 :

  • High Speed Clock Action up to 10MHz (Max)
  • Wait Function by HOLDB Terminal
  • Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
  • 1.8V to 5.5V Single Power Source Operation Most Suitable for Battery Use
  • Up to 128 Bytes in Page Write Mode.
  • For SPI BUS interface (CPOL, CPHA) = (0, 0), (1, 1)
  • Self-timed Programming Cycle
  • Low Current Consumption
    ·At Write Action (5V) : 0.7mA (Typ)
    ·At Read Action (5V) : 2.4mA (Typ)
    ·At Standby Action (5V) : 0.1µA (Typ)
  • Address Auto Increment Function at Read Action
  • Prevention of Write Mistake
    ·Write Prohibition at Power On
    ·Write Prohibition by Command Code (WRDI)
    ·Write Prohibition by WPB Pin
    ·Write Prohibition Block Setting by Status Registers (BP1, BP0)
    ·Prevention of Write Mistake at Low Voltage
  • More than 100 years Data Retention
  • More than 1 Million Write Cycles
  • Bit Format 64K×8
  • Initial Delivery Data
    Memory Array: FFh
    Status Register: WPEN, BP1, BP0 : 0
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