BR25G128FVM-3
SPI BUS EEPROM
신규 설계 비추천
BR25G128FVM-3
SPI BUS EEPROM
기존 고객을 서포트하기 위해 생산하는 제품입니다. 신규 설계용으로는 판매하지 않습니다.
Product Detail
사양 :
Series
BR25G-3
Density [bit]
128K
Bit Format [Word x Bit]
16K x 8
Vcc(Min.)[V]
1.6
Vcc(Max.)[V]
5.5
Circuit Current (Max.)[mA]
8
Standby Current (Max.)[μA]
2
Write Cycle (Max.)[ms]
5
Input Frequency (Max.)[Hz]
20M
Endurance (Max.)[Cycle]
106
Data Retention (Max.)[Year]
100
I/F
SPI BUS
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
85
Package Size [mm]
4.0x2.9 (t=0.9)
특징 :
- High Speed Clock Action up to 20MHz(Max)
- Wait Function by HOLDB TerminalPart or Whole of Memory Arrays Settable asRead only Memory Area by Program1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use.Up to 64 Bytes in Page Write Mode.For SPI Bus Interface(CPOL, CPHA) =(0, 0),(1, 1)
- Self-timed Programming CycleLow Current Consumption
- At Write Action(5V) : 0.5mA(Typ)
- At Read Action(5V) : 2.0mA(Typ)
- At Standby Action(5V) : 0.1µA(Typ)
- Address Auto Increment Function at Read ActionPrevention of Write Mistake
- Write Prohibition at Power On
- Write Prohibition by Command Code(WRDI)
- Write Prohibition by WPB Pin
- Write Prohibition Block Setting by Status Registers(BP1, BP0)
- Prevention of Write Mistake at Low VoltageMore than 100 years Data Retention.More than 1 Million Write Cycles.Bit Format 16K×8Initial Delivery Data
- Memory Array: FFh
- Status Register: WPEN, BP1, BP0 : 0
