ROHM Product Detail

BR25G128F-3
SPI BUS EEPROM

BR25G128F-3은 128kbit SPI BUS 인터페이스 시리얼 EEPROM입니다.

Data Sheet 구입 *
* 본 제품은 STANDARD GRADE 제품입니다.
이 제품은 차재 기기의 사용을 권장하지 않습니다.

Product Detail

 
형명 | BR25G128F-3GE2
상태 | 추천품
패키지 | SOP8
포장 사양 | Taping
포장 수량 | 2500
최소 포장 단위 | 2500
RoHS | Yes

사양 :

Series

BR25G-3

Density [bit]

128K

Bit Format [Word x Bit]

16K x 8

Vcc(Min.)[V]

1.6

Vcc(Max.)[V]

5.5

Circuit Current (Max.)[mA]

8

Standby Current (Max.)[μA]

2

Write Cycle (Max.)[ms]

5

Input Frequency (Max.)[Hz]

20M

Endurance (Max.)[Cycle]

106

Data Retention (Max.)[Year]

100

I/F

SPI BUS

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

85

Package Size [mm]

5x6.2 (t=1.71)

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특징 :

  • High Speed Clock Action up to 20MHz(Max)
  • Wait Function by HOLDB TerminalPart or Whole of Memory Arrays Settable asRead only Memory Area by Program1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use.Up to 64 Bytes in Page Write Mode.For SPI Bus Interface(CPOL, CPHA) =(0, 0),(1, 1)
  • Self-timed Programming CycleLow Current Consumption
  • At Write Action(5V) : 0.5mA(Typ)
  • At Read Action(5V) : 2.0mA(Typ)
  • At Standby Action(5V) : 0.1µA(Typ)
  • Address Auto Increment Function at Read ActionPrevention of Write Mistake
  • Write Prohibition at Power On
  • Write Prohibition by Command Code(WRDI)
  • Write Prohibition by WPB Pin
  • Write Prohibition Block Setting by Status Registers(BP1, BP0)
  • Prevention of Write Mistake at Low VoltageMore than 100 years Data Retention.More than 1 Million Write Cycles.Bit Format 16K×8Initial Delivery Data
  • Memory Array: FFh
  • Status Register: WPEN, BP1, BP0 : 0
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