RGT80TS65D
단락 내량 5µs, 650V 40A, FRD 내장, TO-247GE, Field Stop Trench IGBT
신규 설계 비추천
RGT80TS65D
단락 내량 5µs, 650V 40A, FRD 내장, TO-247GE, Field Stop Trench IGBT
기존 고객을 서포트하기 위해 생산하는 제품입니다. 신규 설계용으로는 판매하지 않습니다.
Product Detail
사양 :
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
40
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
55
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
234
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
20.95x15.94 (t=5.22)
특징 :
1) Low Collector - Emitter Saturation Voltage2) Low Switching Loss
3) Short Circuit Withstand Time 5us
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant
