RGSX5TS65E
단락 내량 8μs, 650V 75A, FRD 내장, Field Stop Trench IGBT
RGSX5TS65E
RGSX5TS65E
단락 내량 8μs, 650V 75A, FRD 내장, Field Stop Trench IGBT
RGSX5TS65E는 범용 인버터, UPS, 용접기 및 파워 컨디셔너 등에 최적인, 단락 내량 8μs 제품입니다.
Product Detail
사양 :
Series
S: For inverter (tsc 8-10µs)
VCES [V]
650
IC(100°C)[A]
75
VCE(sat) (Typ.) [V]
1.7
tf(Typ.) [ns]
87
tsc(Min.) [us]
8
Built-in Diode
FRD
Pd [W]
404
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
특징 :
- Low Collector - Emitter Saturation Voltage
- Short Circuit Withstand Time 8μs
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating ; RoHS Compliant
