GNE1040TB
EcoGaN™, 150V 10A DFN5060, E-mode GaN HEMT

GNE1040TB는 8V 게이트 내압의 150V GaN HEMT입니다. 낮은 ON 저항과 고속 스위칭 성능을 최대한으로 발휘시킴으로써, 저전력 · 소형화에 기여하는 EcoGaN™ 시리즈 제품입니다. 전원 효율은 1MHz의 고주파 대역에서도 96.5% 이상을 실현하였습니다. 또한, 대전류 대응 및 방열성이 우수하고, 범용성이 높은 DFN 패키지를 채용하여, 실장 공정에서의 핸들링이 용이합니다.

Data Sheet 구입
* 본 제품은 STANDARD GRADE 제품입니다.
이 제품은 차재 기기의 사용을 권장하지 않습니다.
Data Sheet 구입

Product Detail

 
형명 | GNE1040TB
상태 | 추천품
패키지 | DFN5060
포장 수량 | 2500
최소 포장 단위 | 2500
포장 사양 | Taping
RoHS | Yes

사양 :

VDS [V]

150

IDS [A]

10

VGS Rating [V]

8

RDS(on) [mΩ]

40

Qg [nC]

2

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Dimensions [mm]

5.0x6.0 (t=1.0)

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특징 :

  • E-mode
  • Reliable and easy to use with DFN package
  • High gate voltage maximum rating 8V
  • Very high switching frequency

Reference Design / Application Evaluation Kit

 
    • Reference Design - REFLD002
    • Laser Driver Reference Design with GaN HEMT for High-Resolution LiDAR

    • The range of uses for LiDAR sensors is expanding to include not only autonomous driving, but also applications in the industrial and infrastructure fields. LiDAR sensors are required to have longer sensing distance and higher resolution, and in addition to improving the characteristics of the laser diode, it is necessary to drive the laser diode at higher speeds and power. ROHM offers a lineup of 905nm high power narrow emission width laser diodes. (RLD90QZWx Series) Reference designs are available that includes EcoGAN™, a next-generation device capable of high-speed drive, along with a high-speed gate driver for GaN HEMTs that contribute to improved LiDAR sensor characteristics (distance and resolution) .

      • Enables high-speed driving of laser diodes - a key device in LiDAR applications
      • Includes next-gen EcoGaN™ devices
      • Built-in high-speed gate driver for GaN HEMTs (BD2311NVX-C)
      • Two circuit types: square wave and resonant

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