ROHM Product Detail

BM3G005MUV-LB (신제품)
Nano Cap™, EcoGaN™, 650V 50mΩ 2MHz, GaN HEMT Power Stage IC

This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BM3G005MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650 V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate up to 150 V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.

Product Detail

 
형명 | BM3G005MUV-LBE2
상태 | 추천품
패키지 | VQFN046V8080
포장 사양 | Taping
포장 수량 | 1000
최소 포장 단위 | 1000
RoHS | Yes

사양 :

Vin (Min.)[V]

-0.6

Vin (Max.)[V]

30

Operating Current@500 kHz(Typ) [mA]

2.2

Quiescent Current (Typ) [μA]

180

Switching Frequency(Max)[MHz]

2

Turn-on Delay Time(Typ)[ns]

14

Turn-off Delay Time(Typ)[ns]

19

Temperature (Min.)[°C]

-40

Temperature (Max.)[°C]

105

ON State Resistance(Typ)[mΩ]

50

Package Size [mm]

8.0x8.0 (t=1.0)

Application

Networking, Server

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Min.)[°C]

150

Find Similar

특징 :

  • Nano Cap™ Integrated 5V LDO
  • Wide Operating Range for VDD Pin Voltage
  • Wide Operating Range for IN Pin Voltage
  • Low VDD Quiescent and Operating Current
  • Low Propagation Delay
  • High dv/dt Immunity
  • Adjustable Gate Drive Strength
  • Power Good Signal Output
  • VDD UVLO Protection
  • Thermal Shutdown Protection

레퍼런스 디자인 / 어플리케이션 평가 Kit

 
    • Evaluation Board - BM3G005MUV-EVK-003
    • The BM3G005MUV-EVK-003 evaluation board consists of the BM3G005MUV (GaN FET (650 V 50 mΩ), integrated driver and protection circuit) and A board on which peripheral components are mounted. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET

  • User's Guide

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