BM61S40RFV-C
절연전압 3750Vrms 절연소자 내장 1ch 게이트 드라이버
BM61S40RFV-C
절연전압 3750Vrms 절연소자 내장 1ch 게이트 드라이버
BM61S40RFV-C는 절연전압 3750Vrms, 입출력 지연시간 65ns, 최소 입력 펄스 폭 60ns의 절연소자 내장 게이트 드라이버입니다. 저전압 오동작 방지 기능 (UVLO), 미러 클램프 기능, 과전압 보호 기능 (OVP)을 내장하고 있습니다.
Product Detail
기능 안전:
사양 :
Isolation Voltage[Vrms]
3750
Channel
1
Vcc1(Min.)[V]
4.5
Vcc1(Max.)[V]
5.5
Vcc2(Min.)[V]
16
Vcc2(Max.)[V]
20
Iout(Max.)[A]
4
I/O Delay Time(Max.)[ns]
65
Min. Input Pulse Width[ns]
60
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
125
Switching Controller
No
Temperature Monitor
No
Package Size [mm]
3.5x10.2 (t=1.9)
Common Standard
AEC-Q100 (Automotive Grade)
특징 :
- AEC-Q100 Qualified(Grade1)
- Providing Galvanic Isolation
- Active Miller Clamping
- Under-Voltage Lockout Function
- Over-Voltage Protect Function
- UL1577(pending)
Reference Design / Application Evaluation Kit
-
- Evaluation Board - BM61S40RFV-EVK001
The BM61S40RFV-EVK001 board can be driving SiC Power Devices. The Input-side power supply voltage is from 4.5 to 5.5 V. The output-side power supply is from 16 to 20 V. The BM61S40RFV-C has Power Supply protections which are the Under-Voltage Lockout (UVLO) function at Input-side and Output-side, and the Over-Voltage Protect (OVP) function at output side.
-
- Evaluation Board - BM61S40RFV-EVK002
The BM61S40RFV-EVK002 board can be driving two SiC Power Devices such as for High-side and Low-side on Half-Bridge application. The Input-side power supply voltage is from 4.5 to 5.5 V. The output-side power supply is from 16 to 20 V. The BM61S40RFV-C has Power Supply protections which are the Under-Voltage Lockout (UVLO) function at Input-side and Output-side, and the Over-Voltage Protect (OVP) function at output side.
