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2.5V Drive Nch+Nch MOSFET (AEC-Q101 Qualified) - UM6K31NFHA

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

형명
상태
패키지
포장 수량
최소 포장 단위
포장 사양
RoHS
UM6K31NFHATCN 공급중 UMT6 3000 3000 Taping Yes
 
사양 :
Grade Automotive
Common Standard AEC-Q101
Package Code SOT-363
JEITA Package SC-88
Package Size[mm] 2.0x2.1(t=0.9)
Number of terminal 6
Polarity Nch+Nch
Drain-Source Voltage VDSS[V] 60
Drain Current ID[A] 0.25
RDS(on)[Ω] VGS=2.5V(Typ.) 3.0
RDS(on)[Ω] VGS=4V(Typ.) 2.3
RDS(on)[Ω] VGS=4.5V(Typ.) 2.1
RDS(on)[Ω] VGS=10V(Typ.) 1.7
RDS(on)[Ω] VGS=Drive (Typ.) 3.0
Power Dissipation (PD)[W] 0.15
Drive Voltage[V] 2.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
특징 :
  • ᆞ2.5V 구동 타입 Nch + Nch 소신호 MOSFET
 
 
관련 상품
관련 신제품 / 갱신 제품트랜지스터
형명 제품 이름 패키지 Datasheet 유통 재고
QS6K1FRA 2.5V 구동 타입 Nch+Nch MOSFET (AEC-Q101 대응) TSMT6   구입
EM6K31 2.5V Drive Nch+Nch MOSFET EMT6   문의
QS5K2 2.5V Drive Nch+Nch MOSFET TSMT5   문의
QS6K1 2.5V Drive Nch+Nch MOSFET TSMT6   문의
QS6M4 2.5V Drive Nch+Pch MOSFET TSMT6   문의
TT8K2 2.5V Drive Nch+Nch MOSFET TSST8   문의
New Products:
 
 
기술 정보
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors