SCT2450KE
SiC MOSFET
SCT2450KE
SCT2450KE
SiC MOSFET
SiC Planar 타입 MOSFET입니다. (SiC-SBD not co-packed) 고내압 · 저 ON 저항 · 고속 스위칭이 특징입니다.
Product Detail
사양 :
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
450
Generation
2nd Gen (Planar)
Drain Current[A]
10
Total Power Dissipation[W]
85
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
특징 :
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant
