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Silicon carbide Schottky Barrier Diode - SCS306AP

Switching loss reduced, enabling high-speed switching . (3-pin package)

* 본 제품은 STANDARD GRADE 제품입니다. 이 제품은 차재 기기의 사용을 권장하지 않습니다.
형명
상태
패키지
포장 수량
최소 포장 단위
포장 사양
RoHS
SCS306APC9 공급중 TO-220ACP 1000 50 Tube Yes
 
사양 :
Grade Standard
Reverse Voltage[V] 650
Continuous Forward Current[A] 6
Total Power Dissipation[W] 46
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
특징 :
    • Shorter recovery time
    • Reduced temperature dependence
    • High-speed switching possible
    • High surge current capability
 
 
관련 상품
관련 신제품 / 갱신 제품SiC 파워 디바이스
형명 제품 이름 패키지 Datasheet 유통 재고
SCS230KE2AHR Silicon carbide Schottky Barrier Diode for Automotive TO-247   문의
SCS240KE2AHR Silicon carbide Schottky Barrier Diode for Automotive TO-247   문의
SCS206AJHR Silicon carbide Schottky Barrier Diode for Automotive TO-263AB (LPTL)   구입
SCS208AJHR Silicon carbide Schottky Barrier Diode for Automotive TO-263AB (LPTL)   문의
SCS210AJHR Silicon carbide Schottky Barrier Diode for Automotive TO-263AB (LPTL)   구입
SCS212AJHR Silicon carbide Schottky Barrier Diode for Automotive TO-263AB (LPTL)   문의
New Products:
 
 
기술 정보
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC Schottky Barrier Diodes