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SiC MOSFET - SCH2080KE

This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.

* 본 제품은 STANDARD GRADE 제품입니다. 이 제품은 차재 기기의 사용을 권장하지 않습니다.
형명
상태
패키지
포장 수량
최소 포장 단위
포장 사양
RoHS
SCH2080KEC 공급중 TO-247 360 30 Tube Yes
 
사양 :
Drain-source Voltage[V] 1200
Drain-source On-state Resistance(Typ.)[mΩ] 80
Drain Current[A] 40.0
Total Power Dissipation[W] 262
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
특징 :
  • ・High-speed switching
    ・Low ON resistance
    ・Low body diode Qrr and trr
    ・Ensured reliability of body diode conduction
    ・SiC SBD co-packed
 
 
단자 배치도 :
Pin Configration
 
 
New Products:
 
 
기술 정보
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET