N-channel SiC Power MOSFET Bare Die - S4001

S4001 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
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* 본 제품은 STANDARD GRADE 제품입니다. 이 제품은 차재 기기의 사용을 권장하지 않습니다.
포장 수량
최소 포장 단위
포장 사양
S4001 공급중 Yes
사양 :
Drain-source Voltage[V] 650
Drain-source On-state Resistance(Typ.)[mO] 30
Drain Current[A] 70.0
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
특징 :
  • · Low ON resistance
    · Fast switching speed
    · Fast revese recovery
    · Easy to parallel
    · Simple to drive
기술 정보
Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET Bare Die