RGT8NL65D
단락 내량 5µs, 650V 4A, FRD 내장, LPDL, Field Stop Trench IGBT
RGT8NL65D
RGT8NL65D
단락 내량 5µs, 650V 4A, FRD 내장, LPDL, Field Stop Trench IGBT
RGT8NL65D는 Low VCE(sat)의 Field Stop Trench IGBT입니다. 인버터, UPS, 파워 컨디셔너, 용접기 등의 용도에 최적입니다.
Product Detail
사양 :
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
4
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
71
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
65
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.1x15.1 (t=4.7)
특징 :
- Low Collector - Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5μs
- Built in Very Fast & Soft Recovery FRD (RFN - Series)
- Pb - free Lead Plating ; RoHS Compliant
